Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

289

Page(to):

292

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	7 Conference Proceedings Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD B. Kallinger, M. Rommel, L. Lilja, J. Ul Hassan, I.D. Booker Trans Tech Publications
2 Conference Proceedings Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	8 Conference Proceedings Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS I.D. Booker, H. Abdalla, L. Lilja, J. Ul Hassan, P. Bergman Trans Tech Publications
3 Conference Proceedings Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers L. Lilja, I. Farkas, I. Booker, J. ul Hassan, E. Janzén, J.P. Bergman Trans Tech Publications	9 Conference Proceedings Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications
4 Conference Proceedings Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén Trans Tech Publications	10 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E. Trans Tech Publications
5 Conference Proceedings High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers I.D. Booker, J. Hassan, E. Janzén, J.P. Bergman Trans Tech Publications	11 Conference Proceedings 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen Trans Tech Publications
6 Conference Proceedings Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping J. Hassan, J.P. Bergman Trans Tech Publications	12 Conference Proceedings Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12