Epitaxial Growth of 4H-SiC Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method

Epitaxial Growth of 4H-SiC Using Si₂(CH₃)₆+Si₂Cl₆+C₃H₈+H₂ System by Atmospheric Pressure Hot CVD Method

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

97

Page(to):

100

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH₃)₆Si₂] T.W. Lee, I.G. Yeo, B.C. Shin, W.J. Lee, M.S. Park Trans Tech Publications	7 Conference Proceedings Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System Miyanagi, T., Nishino, S. Trans Tech Publications
2 Conference Proceedings High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈ H.T. Lee, H.J. Lee, M.S. Park, Y.S. Jang, W.J. Lee Trans Tech Publications	8 Conference Proceedings Epitaxial Growth of 2 Inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Zhu, Jiliang, Chen, Yi, Mukai, Yusuke, Shoji, Akira, Nishiguchi, Taro, Ohshima, Satoru, Nishino, S. Materials Research Society
3 Conference Proceedings A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si Wu, C.H., Chung, J., Hong, M.H., Zorman, C.A., Pirouz, P., Mehregany, M. Trans Tech Publications	9 Conference Proceedings CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications
4 Conference Proceedings Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM H.S. Seo, H.G. Song, J.H. Moon, J.H. Yim, M.S. Oh Trans Tech Publications	10 Conference Proceedings Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System K. Tamura, C. Kudou, K. Masumoto, J. Nishio, K. Kojima Trans Tech Publications
5 Conference Proceedings Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications	11 Conference Proceedings Low Temperature Homoepitaxial Growth of 4H-SiC on 4 ° Off-Axis Carbon-Face Substrate Using BTMSM Source H.H. Lee, H.S. Seo, D.H. Lee, C.H. Kim, H.W. Kim Trans Tech Publications
6 Conference Proceedings Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System Miyanagi, T., Nishino, S. Trans Tech Publications	12 Conference Proceedings Bio-Inspired Synthesis of Al₂O₃/Polymer Composite K.M. Nam, Y.J. Lee, S.R. Kim, W.T. Kwon, H.S. Kim Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12