Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

69

Page(to):

72

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT K. Ariyawong, E. Blanquet, J.M. Dedulle, T. Ouisse, D. Chaussende Trans Tech Publications	7 Conference Proceedings Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals G.L. Sun, I.G. Galben-Sandulache, T. Ouisse, J.M. Dedulle, M. Pons Trans Tech Publications
2 Conference Proceedings Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach K. Ariyawong, J.M. Dedulle, D. Chaussende Trans Tech Publications	8 Conference Proceedings Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC D. Chaussende, L. Parent-Bert, Y.J. Shin, T. Ouisse, T. Yoshikawa Trans Tech Publications
3 Conference Proceedings Top Seeded Solution Growth of 3C-SiC Single Crystals F. Mercier, D. Chaussende, J.M. Dedulle, M. Pons, R. Madar Trans Tech Publications	9 Conference Proceedings Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach K. Ariyawong, C. Chatillon, E. Blanquet, J.M. Dedulle, D. Chaussende Trans Tech Publications
4 Conference Proceedings Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents Y.J. Shin, K. Ariyawong, B. Doisneau, J.M. Dedulle, P. Brosselard Trans Tech Publications	10 Conference Proceedings Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique I.G. Galben-Sandulache, G.L. Sun, J.M. Dedulle, T. Ouisse, R. Madar Trans Tech Publications
5 Conference Proceedings Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide M. Seiss, T. Ouisse, D. Chaussende Trans Tech Publications	11 Conference Proceedings Spiral Step Dissociation on PVT Grown SiC Crystals M. Seiss, T. Ouisse, D. Chaussende Trans Tech Publications
6 Conference Proceedings Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT K. Ariyawong, N. Tsavdaris, J.M. Dedulle, E. Sarigiannidou, T. Ouisse Trans Tech Publications	12 Conference Proceedings Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy L.T.M. Hoa, T. Ouisse, M. Seiss, D. Chaussende Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12