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Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

Author(s):
Publication title:
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
Title of ser.:
Materials science forum
Ser. no.:
711
Pub. Year:
2012
Page(from):
154
Page(to):
158
Pages:
5
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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