Material Limitations for the Development of High Performance SiC NWFETs
- Author(s):
- Publication title:
- HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
- Title of ser.:
- Materials science forum
- Ser. no.:
- 711
- Pub. Year:
- 2012
- Page(from):
- 70
- Page(to):
- 74
- Pages:
- 5
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
Trans Tech Publications |
6
Conference Proceedings
Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching
Trans Tech Publications |
12
Conference Proceedings
Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
Trans Tech Publications |