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Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate

Author(s):
Publication title:
Frontier of nanoscience and technology : Selected, peer reviewed papers from the international conference on Frontier of Nanoscience and Technology (ICFNST 2011), held in Kunming, China, 28-29 September 2011
Title of ser.:
Materials science forum
Ser. no.:
694
Pub. Year:
2011
Page(from):
891
Page(to):
895
Pages:
5
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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