3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

555

Page(to):

558

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications	7 Conference Proceedings Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing Vassilevski, K.V., Nikitina, I.P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Malhan, R.K., Yamamoto, T. Trans Tech Publications
2 Conference Proceedings 4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications	8 Conference Proceedings Silicon Carbide Static Induction Transistor with Implanted Buried Gate K.V. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications
3 Conference Proceedings Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices S. Barker, K.V. Vassilevski, I.P. Nikitina, N.G. Wright, A.B. Horsfall Trans Tech Publications	9 Conference Proceedings Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
4 Conference Proceedings Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications	10 Conference Proceedings Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
5 Conference Proceedings Low Voltage Silicon Carbide Zener Diode Vassilevski, K.V., Zekentes, K., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications	11 Conference Proceedings Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation Vassilevski, K.V., Hedley, J., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications
6 Conference Proceedings Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications	12 Conference Proceedings 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12