Blank Cover Image

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

Author(s):
Publication title:
Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd
Title of ser.:
Materials science forum
Ser. no.:
679-680
Pub. Year:
2011
Page(from):
421
Page(to):
424
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

Lulli, G., Albertazzi, E., Nipoti, R., Bianconi, M., Carnera, A.

Trans Tech Publications
7 Conference Proceedings 1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

R. Nipoti, A. Parisini, S. Vantaggio, G. Alfieri, A. Carnera

Trans Tech Publications
2 Conference Proceedings Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

R. Nipoti, M. Puzzanghera, G. Sozzi

Trans Tech Publications
8 Conference Proceedings High Dose Al+ Implanted and Microwave Annealed 4H-SiC

R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella

Trans Tech Publications
3 Conference Proceedings Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

R. Nipoti, F. Moscatelli, A. Roncaglia, F. Bonafè, F. Mancarella

Trans Tech Publications
9 Conference Proceedings Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H-SiC p+-i-n Diodes

L. di Benedetto, G.D. Licciardo, S. Bellone, R. Nipoti

Trans Tech Publications
4 Conference Proceedings Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

R. Nipoti, A. Nath, S. Cristiani, M. Sanmartin, M.V. Rao

Trans Tech Publications
10 Conference Proceedings Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato

Trans Tech Publications
5 Conference Proceedings Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

M. Puzzanghera, R. Nipoti

Trans Tech Publications
11 Conference Proceedings DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

H.M. Ayedh, M. Puzzanghera, B.G. Svensson, R. Nipoti

Trans Tech Publications
6 Conference Proceedings Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

U. Grossner, F. Moscatelli, R. Nipoti

Trans Tech Publications
12 Conference Proceedings Al+ Ion Implanted On-Axis

R. Nipoti, A. Parisini, A. Carnera, C. Albonetti, S. Vantaggio

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12