Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

294

Page(to):

297

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive Y.Z. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno Trans Tech Publications	7 Conference Proceedings Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method Y.Z. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno Trans Tech Publications
2 Conference Proceedings Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai Trans Tech Publications	8 Conference Proceedings Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer Y. Ishikawa, Y.Z. Yao, Y. Sugawara, K. Danno, H. Suzuki Trans Tech Publications
3 Conference Proceedings Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing Y.Z. Yao, K. Sato, Y. Sugawara, Y. Ishikawa, Y. Okamoto Trans Tech Publications	9 Conference Proceedings Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors Y.Z. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno Trans Tech Publications
4 Conference Proceedings Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation Y.Z. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki Trans Tech Publications	10 Conference Proceedings Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH Y.Z. Yao, Y. Ishikawa, Y. Sugawara, K. Sato Trans Tech Publications
5 Conference Proceedings Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000°C Y.Z. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno Trans Tech Publications	11 Conference Proceedings Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki Trans Tech Publications
6 Conference Proceedings Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy Y. Sugawara, Y.Z. Yao, Y. Ishikawa, K. Danno, H. Suzuki Trans Tech Publications	12 Conference Proceedings Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth Y.Z. Yao, Y. Ishikawa, Y. Sugawara, K. Sato Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12