Effect of Low Frequency Magnetic Field on SiC Solution Growth

Effect of Low Frequency Magnetic Field on SiC Solution Growth

Author(s):

Publication title:

Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Title of ser.:

Materials science forum

Ser. no.:

679-680

Pub. Year:

2011

Page(from):

32

Page(to):

35

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054177
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2010)
Conf. info. (Number):	8th
Conf. info. (Venue):	Oslo, Norway
Conf. info. (Date):	2010.08.29-2010.09.02
Note for article:	8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd

Similar Items:

1 Conference Proceedings Bulk and Surface Effects on the Polytype Stability in SiC Crystals F. Mercier, S. Nishizawa Trans Tech Publications	7 Conference Proceedings Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method Nishizawa, S.-i., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N., Arai, K. Trans Tech Publications
2 Conference Proceedings Pressure Effect in Sublimation Growth of Bulk SiC Kitou, Y., Bahng, W., Nishizawa, S., Nishino, S., Arai, K. Trans Tech Publications	8 Conference Proceedings Large Diameter and Long Length Growth of SiC Single Crystal Kato, T., Ohno, T., Hirose, F., Oyanagi, N., Nishizawa, S., Arai, K. Trans Tech Publications
3 Conference Proceedings Top Seeded Solution Growth of 3C-SiC Single Crystals F. Mercier, D. Chaussende, J.M. Dedulle, M. Pons, R. Madar Trans Tech Publications	9 Conference Proceedings Analysis of Growth Velocity of SiC Growth by the Physical Vapor Transport Method K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, S.I. Nishizawa Trans Tech Publications
4 Conference Proceedings Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor Nishizawa, S. I., Pons, M. Trans Tech Publications	10 Conference Proceedings Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase D. Chaussende, J. Eid, F. Mercier, R. Madar, M. Pons Trans Tech Publications
5 Conference Proceedings Effect of Radiation in Solid During SiC Sublimation Growth Shin-ichi Nishizawa, Shin-ichi Nakashima, Tomohisa Kato Materials Research Society	11 Conference Proceedings Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors Yamada, Y., Nishizawa, S., Nakashima, S., Arai, K. Trans Tech Publications
6 Conference Proceedings High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications	12 Conference Proceedings Temperature Gradient Effect on SiC Epitaxy in Liquid Phase Khan, M. N., Nishizawa, S., Bahng, W., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12