Blank Cover Image

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs

Author(s):
Publication title:
Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
Title of ser.:
Materials science forum
Ser. no.:
645-648
Pub. Year:
2010
Pt.:
2
Page(from):
1005
Page(to):
1008
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

V. Tilak, K. Matocha, G. Dunne

Trans Tech Publications

K. Matocha, Z. Stum, S. Arthur, G. Dunne, L. Stevanovic

Trans Tech Publications

R.R. Rao, K. Matocha, V. Tilak

Trans Tech Publications

S.I. Soloviev, K. Matocha, G. Dunne, Z. Stum

Trans Tech Publications

K. Matocha, V. Tilak

Trans Tech Publications

K. Matocha, P.A. Losee, A. Gowda, E. Delgado, G. Dunne

Trans Tech Publications

L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha

Trans Tech Publications

Saks, N. S., Mani, S. S., Agarwal, A. K., Hegde, V. S.

Trans Tech Publications

H. Naik, T.P. Chow

Trans Tech Publications

R. Rao, S. Balaji, K. Matocha, V. Tilak

Trans Tech Publications

V. Tilak, K. Matocha, G. Dunne, F. Allerstam, E.Ö. Sveinbjörnsson

Trans Tech Publications

J.A. Fronheiser, A. Chatterjee, U. Grossner, K. Matocha, V. Tilak

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12