Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 2
- Page(from):
- 983
- Page(to):
- 986
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
8
Conference Proceedings
Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
Trans Tech Publications |
3
Conference Proceedings
Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
Trans Tech Publications |
9
Conference Proceedings
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
Trans Tech Publications |
Trans Tech Publications |