Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 1
- Page(from):
- 633
- Page(to):
- 636
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Electrochemical Society |
9
Conference Proceedings
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
Trans Tech Publications |
4
Conference Proceedings
Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs
Electrochemical Society |
10
Conference Proceedings
Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices
Trans Tech Publications |
5
Conference Proceedings
Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
Trans Tech Publications |
11
Conference Proceedings
Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |