Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
- Author(s):
- Publication title:
- Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
- Title of ser.:
- Materials science forum
- Ser. no.:
- 645-648
- Pub. Year:
- 2010
- Pt.:
- 1
- Page(from):
- 565
- Page(to):
- 568
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
Trans Tech Publications |
7
Conference Proceedings
Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
Trans Tech Publications |
3
Conference Proceedings
Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |