Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

1

Page(from):

499

Page(to):

502

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Near-Interface Traps in n-type SiO₂/SiC MOS Capacitors from Energy-Resolved CCDLTS Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney Materials Research Society	7 Conference Proceedings Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment Z.Y. Peng, Y.Y. Wang, H.J. Shen, Y. Bai, Y.D. Tang Trans Tech Publications
2 Conference Proceedings Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces A.F. Basile, S. Dhar, J.R. Williams, L.C. Feldman, P.M. Mooney Trans Tech Publications	8 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
3 Conference Proceedings The Limits of Post Oxidation Annealing in NO J. Rozen, X.G. Zhu, A.C. Ahyi, J.R. Williams, L.C. Feldman Trans Tech Publications	9 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
4 Conference Proceedings Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation A.F. Basile, A.C. Ahyi, L.C. Feldman, J.R. Williams, P.M. Mooney Trans Tech Publications	10 Conference Proceedings Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC Bardeleben, H. J. von, Cantin, J. L., Vickridge, I., Song, Y., Dhar, S., Feldman, L. C., Williams, J. R., Ke, L., … Trans Tech Publications
5 Conference Proceedings Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J., Issacs-Smith, T., Williams, J., Jones, K.A., Lelis, A., Tipton, W., … Trans Tech Publications	11 Conference Proceedings Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs B.R. Tuttle, S. Dhar, S.H. Ryu, X. Zhu, J.R. Williams Trans Tech Publications
6 Conference Proceedings Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications	12 Conference Proceedings Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs S. Dhar, A.C. Ahyi, J.R. Williams, S.H. Ryu, A.K. Agarwal Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12