Blank Cover Image

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

Author(s):
Publication title:
Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009
Title of ser.:
Materials science forum
Ser. no.:
645-648
Pub. Year:
2010
Pt.:
1
Page(from):
327
Page(to):
330
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

J. Hassan, A. Henry, J.P. Bergman

Trans Tech Publications
7 Conference Proceedings Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Jacobson, H., Bergman, J.P., Hallin, C., Tuomi, T., Janzen, E.

Trans Tech Publications
2 Conference Proceedings 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen

Trans Tech Publications
8 Conference Proceedings Improved Epilayer Surface Morphology on 2° Off-Cut 4H-SiC Substrates

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications
3 Conference Proceedings High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

I.D. Booker, J. Hassan, E. Janzén, J.P. Bergman

Trans Tech Publications
9 Conference Proceedings Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén

Trans Tech Publications
4 Conference Proceedings Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications
10 Conference Proceedings Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination

A. Galeckas, H.M. Ayedh, J.P. Bergman, B.G. Svensson

Trans Tech Publications
5 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications
11 Conference Proceedings High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

J. Hassan, J.P. Bergman, A. Henry, E. Janzén

Trans Tech Publications
6 Conference Proceedings Thick Epilayer for Power Devices

A. Henry, J. Hassan, H. Pedersen, F. Beyer, J.P. Bergman, S. Andersson, E. Janzen, P. Godignon

Trans Tech Publications
12 Conference Proceedings Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12