Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

1

Page(from):

323

Page(to):

326

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications	7 Conference Proceedings Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC T. Hatakeyama, H. Kono, T. Suzuki, J. Senzaki, K. Fukuda Trans Tech Publications
2 Conference Proceedings Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications	8 Conference Proceedings Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications
3 Conference Proceedings Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications	9 Conference Proceedings Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer H. Tsuchida, M. Ito, I. Kamata, M. Nagano Trans Tech Publications
4 Conference Proceedings Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy H. Tsuchida, I. Kamata, M. Nagano Trans Tech Publications	10 Conference Proceedings Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face T. Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata, J. Senzaki Trans Tech Publications
5 Conference Proceedings Three-Dimensional Imaging of Extended Defects in 4H-SiC R. Tanuma, M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	11 Conference Proceedings Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications
6 Conference Proceedings Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications	12 Conference Proceedings Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12