Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

Author(s):

Publication title:

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Title of ser.:

Materials science forum

Ser. no.:

645-648

Pub. Year:

2010

Pt.:

1

Page(from):

199

Page(to):

202

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054155
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2009
Conf. info. (Venue):	Nurnberg, Germany
Conf. info. (Date):	2009.10.11-2009.10.16
Note for article:	International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009

Similar Items:

1 Conference Proceedings Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers G. Feng, J. Suda, T. Kimoto Trans Tech Publications	7 Conference Proceedings Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping G. Feng, J. Suda, T. Kimoto Trans Tech Publications
2 Conference Proceedings Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model K. Kawahara, J. Suda, T. Kimoto Trans Tech Publications	8 Conference Proceedings In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate G. Feng, J. Suda, T. Kimoto Trans Tech Publications
3 Conference Proceedings Temperature Dependence of Impact Ionization Coefficients in 4H-SiC H. Niwa, J. Suda, T. Kimoto Trans Tech Publications	9 Conference Proceedings High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
4 Conference Proceedings Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process H. Miyake, T. Kimoto, J. Suda Trans Tech Publications	10 Conference Proceedings Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications
5 Conference Proceedings Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	11 Conference Proceedings Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers P.B. Klein, R.L. Myers-Ward, K.K. Lew, B.L. VanMil, C.R. Eddy Jr. Trans Tech Publications
6 Conference Proceedings Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals T. Okuda, H. Miyake, T. Kimoto, J. Suda Trans Tech Publications	12 Conference Proceedings Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12