Blank Cover Image

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

Author(s):
Publication title:
Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain
Title of ser.:
Materials science forum
Ser. no.:
615-617
Pub. Year:
2009
Page(from):
971
Page(to):
974
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs

J.Y. Lim, Y.H. Choi, Y.S. Kim, M.K. Kim, M.K. Han

Trans Tech Publications
7 Conference Proceedings Multi-Energy Oxygen Ion Implantation for AlGaN/GaN HEMTs

Shiu, J.Y., Shoau, Y.S., Huang, J.-C, Hsieh, Y.-C., Chang, C.-T., Lu, C.-Y., Chang, E.Y.

Electrochemical Society
2 Conference Proceedings The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

Y.H. Choi, J.Y. Lim, K.H. Cho, I.H. Ji, M.K. Han

Trans Tech Publications
8 Conference Proceedings 1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO₂ Passivation Layer

Jiyong Lim, Young-Hwan Choi, Youngshil Kim Kim, Min-Ki Kim, Min-Koo Han

Materials Research Society
3 Conference Proceedings HVPE-Grown AlGaN/GaN HEMTs

Luo, B., Ren, F., Mastro, M. A., Tsvetkov, D., Pechnikov, A., Soukhoveev, V., Dmitriev, V., Baik, K. H., Pearton, S. J.

Materials Research Society
9 Conference Proceedings High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T., Jimbo, T.

Trans Tech Publications
4 Conference Proceedings Effects of Surface-Segregated Sulfur on Primary Texture and Surface-Energy-Induced Selective Grain Growth in Ultra-Thin 3% Silicon-Iron Alloy

Cho, S.S., Kim, S.B., Choi, Y.S., Chai, K.H., Oh, J.M., Han, S.O., Heo, N.H.

Trans Tech Publications
10 Conference Proceedings High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T., Jimbo, T.

Trans Tech Publications
5 Conference Proceedings Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Kim, J-H., Yang, G. M., Choi, S. C., Choi, J. Y., Cho, H. K., Lim, K. Y., Lee, H. J.

MRS - Materials Research Society
11 Conference Proceedings Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

A. Nakajima, S. Yagi, M. Shimizu, H. Okumura

Trans Tech Publications
6 Conference Proceedings Pulse Testing of AlGaN/GaN HEMT

Baca, A. G., Kim, Y.M., Marsh, P.F., Armendariz, M.G., Sandoval, C.E., Allerman, A.A., Kurtz, S.R., Overberg, M.E., …

Electrochemical Society
12 Conference Proceedings Explanation of LER using the concept of gel layer in chemically amplified photoresists

Cho, J.Y., Choi, S.J., Choi, Y.J., Kim, H.L., Kim, K.H.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12