Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer

Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

675

Page(to):

678

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate. S. Katakami, S. Ono, M. Arai Trans Tech Publications	7 Conference Proceedings Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation M. Satoh, S. Nagata, T. Nakamura, H. Doi, M. Shibagaki Trans Tech Publications
2 Conference Proceedings RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate Ogata, M., Katakami, S., Ono, S., Arai, M. Trans Tech Publications	8 Conference Proceedings High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
3 Conference Proceedings Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate S. Katakami, M. Ogata, S. Ono, M. Arai Trans Tech Publications	9 Conference Proceedings High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
4 Conference Proceedings Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs T. Deguchi, S. Katakami, H. Fujisawa, K. Takenaka, H. Ishimori Trans Tech Publications	10 Conference Proceedings Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET Arai, M., Honda, H., Ogata, M., Sawazaki, H., Ono, S. Trans Tech Publications
5 Conference Proceedings Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates Ono, R., Fujimaki, M., Hon-Joo, N., Tanimoto, S., Shinohe, T., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications	11 Conference Proceedings Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET Arai, M., Honda, H., Ogata, M., Sawazaki, H., Ono, S. Trans Tech Publications
6 Conference Proceedings Annealing Effect on Characteristics of p⁺n 4H-SIC Diode Formed by Al Ion Implantation M. Satoh, S. Miyagawa, T. Kudoh, A. Egami, K. Numajiri Trans Tech Publications	12 Conference Proceedings Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices S. Katakami, M. Arai, K. Takenaka, Y. Yonezawa, H. Ishimori Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12