Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

663

Page(to):

666

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics W. Bahng, H.J. Cheong, I.H. Kang, S.J. Kim, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications	7 Conference Proceedings Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC Bahng, W., Song, G.H., Kim, N.K., Kim, S.C., Seo, K.S., Kim, H.W., Kim, E.D. Trans Tech Publications
2 Conference Proceedings Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations I.H. Kang, W. Bahng, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications	8 Conference Proceedings Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC Cheong, K. Y., Bahng, W., Kim, N. K. Trans Tech Publications
3 Conference Proceedings Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation … I.H. Kang, J.Y. Song, S.J. Joo, W. Bahng, S.C. Kim Trans Tech Publications	9 Conference Proceedings FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD S.J. Kim, S. Kim, S.C. Kim, I.H. Kang, K.H. Lee, T. Matsuoka Trans Tech Publications
4 Conference Proceedings Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET I.H. Kang, S.J. Joo, W. Bahng, S.C. Kim, N.K. Kim Trans Tech Publications	10 Conference Proceedings Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring Bahng, W., Song, G.H., Kim, H.W., Seo, K.S., Kim, N.K. Trans Tech Publications
5 Conference Proceedings Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates Bahng, W., Cheong, H.J., Kang, I.H., Kim, S.C., Kim, K.H., Kim, N.K. Trans Tech Publications	11 Conference Proceedings Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer Bahng, W., Kim, N.-K., Kim, S.C., Song, G.H., Kim, E.-D. Trans Tech Publications
6 Conference Proceedings 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique Song, G.H., Kim, H.W., Bahng, W., Kim, S.C., Kim, N.K. Trans Tech Publications	12 Conference Proceedings Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination S.J. Kim, Y.S. Choi, S.J. Yu, S.C. Kim, W. Bahng, K.H. Lee Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12