Electrochemical Polishing of p-Type 4H SiC

Electrochemical Polishing of p-Type 4H SiC

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

601

Page(to):

604

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC Y. Ke, R.P. Devaty, W.J. Choyke Trans Tech Publications	7 Conference Proceedings New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima Trans Tech Publications
2 Conference Proceedings CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications	8 Conference Proceedings Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC R.P. Devaty, F. Yan, W.J. Choyke, A. Gali, T. Kimoto Trans Tech Publications
3 Conference Proceedings Columnar Pore Growth in n-Type 6H SiC Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J. Trans Tech Publications	9 Conference Proceedings Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC W.J. Choyke, B. D'Urso, F. Yan, R.P. Devaty Trans Tech Publications
4 Conference Proceedings Porous Structure of Anodized p-Type 6H SiC Shishkin, Y., Ke, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	10 Conference Proceedings Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C F. Yan, A. Espenlaub, R.P. Devaty, T. Ohshima, W.J. Choyke Trans Tech Publications
5 Conference Proceedings Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 … F. Yan, R.P. Devaty, W.J. Choyke, K. Danno, G. Alfieri Trans Tech Publications	11 Conference Proceedings Photoluminescence Study of C-H and C-D Centers in 4H SiC Bai, S., Yan, F., Devaty, R.P., Choyke, W.J., Grotzschel, R., Wagner, G., MacMillan, M.F. Trans Tech Publications
6 Conference Proceedings Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications	12 Conference Proceedings Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC Yan, F., Devaty, R.P., Choyke, W.J., Gali, A., Bhat, I.B., Larkin, D.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12