P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

165

Page(to):

168

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon G. Wagner, J. Schwarzkopf, M. Schmidbauer, R. Fornari Trans Tech Publications	7 Conference Proceedings P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications
2 Conference Proceedings Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor Wagner, G., Irmscher, K. Trans Tech Publications	8 Conference Proceedings Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation P. Hens, J. Müller, G. Wagner, R. Liljedahl, E. Spiecker Trans Tech Publications
3 Conference Proceedings Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications	9 Conference Proceedings Structural Quality and Electrical Behavior of Epitaxial High-k Y2O3/Si(001) Vellianitis, G., Apostolopoulos, G., Dimoulas, A., Argyropoulos, K., Mereu, B., Scholz, R., Alexe, M., Hooker, J. C. Materials Research Society
4 Conference Proceedings Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications	10 Conference Proceedings Growth of δ-Doped SiC Epitaxial Layers Karlsson, S., Adas, C., Konstantinov, A., Linnarsson, M.K. Trans Tech Publications
5 Conference Proceedings Doped Silicon Epitaxial Layers by MBE Datta,P., Prakash,Anand, Kumar,Praveen, Gupta,S.K., Kesavan,R. SPIE-The International Society for Optical Engineering, Narosa	11 Conference Proceedings Structural Quality and Electrical Behavior of Epitaxial High-k Y2O3/Si(001) Vellianitis, G., Apostolopoulos, G., Dimoulas, A., Argyropoulos, K., Mereu, B., Scholz, R., Alexe, M., Hooker, J.C. Materials Research Society
6 Conference Proceedings p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail Trans Tech Publications	12 Conference Proceedings The Nature of Trigonal Centers in Iron-Doped p-type Silicon Gehlhoff,W., Irmscher,K., Rehse,U. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12