Blank Cover Image

On-Axis Homoepitaxy on Full 2″ 4H-SiC Wafer for High Power Applications

Author(s):
Publication title:
Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain
Title of ser.:
Materials science forum
Ser. no.:
615-617
Pub. Year:
2009
Page(from):
133
Page(to):
136
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

J. Hassan, J.P. Bergman, A. Henry, E. Janzén

Trans Tech Publications
7 Conference Proceedings 3.3 kV-10A 4H-SiC PiN Diodes

P. Brosselard, N. Camara, J. Hassan, X. Jordá, J.P. Bergman

Trans Tech Publications
2 Conference Proceedings 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen

Trans Tech Publications
8 Conference Proceedings Growth and Properties of SiC On-Axis Homoepitaxial Layers

J. Hassan, J.P. Bergman, J. Palisaitis, A. Henry, P.J. McNally

Trans Tech Publications
3 Conference Proceedings Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

M. Florentin, J. Montserrat, P. Brosselard, A. Henry, P. Godignon

Trans Tech Publications
9 Conference Proceedings Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen

Trans Tech Publications
4 Conference Proceedings Thick Epilayer for Power Devices

A. Henry, J. Hassan, H. Pedersen, F. Beyer, J.P. Bergman, S. Andersson, E. Janzen, P. Godignon

Trans Tech Publications
10 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications
5 Conference Proceedings Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers

J. Hassan, A. Henry, J.P. Bergman

Trans Tech Publications
11 Conference Proceedings Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC

Storasta, L., Henry, A., Bergman, J.P., Janzen, E.

Trans Tech Publications
6 Conference Proceedings Improved SiC Epitaxial Material for Bipolar Applications

Peder Bergman, Jawad ul Hassan, Alex Ellison, Anne Henry, Philippe Godignon, Pierre Brosselard, Erik Janzén

Materials Research Society
12 Conference Proceedings Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

J. Hassan, J.P. Bergman

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12