The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques

The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques

Author(s):

Publication title:

Positron and positronium chemistry : proceedings of the 9th International Workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China

Title of ser.:

Materials science forum

Ser. no.:

607

Pub. Year:

2009

Page(from):

131

Page(to):

133

Pages:

3

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054135
Series ID:	PA00000012
Conf. info. (Name):	International Workshop on Positron and Positronium Chemistry
Conf. info. (Number):	9th
Conf. info. (Venue):	Wuhan University, China
Conf. info. (Date):	2008.05.11-2008.05.15
Note for article:	9th International Workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China

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