12 kV 4H-SiC p-IGHTs with Record Low Specific On-Resistance

12 kV 4H-SiC p-IGHTs with Record Low Specific On-Resistance

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

1187

Page(to):

1190

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed Q.J. Zhang, G. Wang, C. Jonas, C. Capell, S. Pickle, P. Butler, D.J. Lichtenwalner, E. van Brunt, S.H. Ryu, J. Richmond, … Trans Tech Publications	7 Conference Proceedings 9 kV 4H-SiC IGBTs with 88 mΩ・cm2 of R diff, on Q.C. Zhang, C. Jonas, B. Heath, M. Das, S.H. Ryu, A. Agarwal, J. Palmour Trans Tech Publications
2 Conference Proceedings Simulations of 10 kV Trench Gate IGBTs on 4H-SiC Zhang, Q.C., Ryu, S.H., Jonas, C., Agarwal, A.K., Palmour, J.W. Trans Tech Publications	8 Conference Proceedings 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination Q.J. Zhang, A.K. Agarwal, C. Capell, L. Cheng, M.J. O'Loughlin Trans Tech Publications
3 Conference Proceedings Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation Mode P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, Q.J. Zhang Trans Tech Publications	9 Conference Proceedings A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
4 Conference Proceedings A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications	10 Conference Proceedings Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications
5 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications	11 Conference Proceedings Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Krishnaswami, S., Palmour, J.W. Trans Tech Publications
6 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications	12 Conference Proceedings High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12