A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

1171

Page(to):

1174

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications	7 Conference Proceedings High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension R. Ghandi, B. Buono, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications
2 Conference Proceedings 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications	8 Conference Proceedings Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability R. Ghandi, H.S. Lee, M. Domeij, B. Buono, C.M. Zetterling Trans Tech Publications
3 Conference Proceedings 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, R. Ghandi, M. Östling Trans Tech Publications	9 Conference Proceedings A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling, E.O. Sveinbjornsson Trans Tech Publications
4 Conference Proceedings Current Gain Dependence on Emitter Width in 4H-SiC BJTs Domeij, M., Lee, H.S., Zetterling, C.M., Ostling, M., Schoner, A. Trans Tech Publications	10 Conference Proceedings Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE B. Buono, H.S. Lee, M. Domeij, C.M. Zetterling, M. Östling Trans Tech Publications
5 Conference Proceedings Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications	11 Conference Proceedings Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors Danielsson, E., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications
6 Conference Proceedings Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications	12 Conference Proceedings Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K Lee, H.S., Koo, S.M., Zetterling, C.M., Danielsson, E., Domeij, M., Oestling, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12