4H-SiC Bipolar Junction Transistors with a Current Gain of 108

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

1159

Page(to):

1162

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC Q.C.J. Zhang, R. Callanan, A.K. Agarwal, A.A. Burk, M.J. O'Loughlin Trans Tech Publications	7 Conference Proceedings High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors Zhang, J., Alexandrov, P., Zhao, J.H. Trans Tech Publications
2 Conference Proceedings High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications	8 Conference Proceedings 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami, S., Agarwal, A., Capell, C., Richmond, J., Ryu, S. H., Palmour, J., Balachandran, S., Chow, T. P., Bayne, … Trans Tech Publications
3 Conference Proceedings 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile J.H. Zhang, L. Fursin, X.Q. Li, X.H. Wang, J.H. Zhao Trans Tech Publications	9 Conference Proceedings 9 kV, 1 cm² SiC Gate Turn-Off Thyristors A.K. Agarwal, Q.C.J. Zhang, R. Callanan, C. Capell, A.A. Burk Trans Tech Publications
4 Conference Proceedings Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process H. Miyake, T. Kimoto, J. Suda Trans Tech Publications	10 Conference Proceedings A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor Zhang, J., Alexandrov, P., Zhao, J.H. Trans Tech Publications
5 Conference Proceedings Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed Q.J. Zhang, G. Wang, C. Jonas, C. Capell, S. Pickle, P. Butler, D.J. Lichtenwalner, E. van Brunt, S.H. Ryu, J. Richmond, … Trans Tech Publications	11 Conference Proceedings A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer Zhao, J.H., Zhang, J., Alexandrov, P., Li, X., Burke, T. Trans Tech Publications
6 Conference Proceedings A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications	12 Conference Proceedings Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal R.E. Stahlbush, N.A. Mahadik, Q.J. Zhang, A.A. Burk, B.A. Hull Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12