1270V, 1.21mΩ⋅cm² SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 2
- Page(from):
- 1071
- Page(to):
- 1074
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Trans Tech Publications |
8
Conference Proceedings
Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance
Trans Tech Publications |
3
Conference Proceedings
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Statie Induction Transistors (BG-SITs)
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation
Trans Tech Publications |