Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 2
- Page(from):
- 1067
- Page(to):
- 1070
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
Trans Tech Publications |
8
Conference Proceedings
Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
Trans Tech Publications |
3
Conference Proceedings
In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
Trans Tech Publications |