Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

967

Page(to):

970

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1o-Off Substrate by Closed-Space Sublimation … Kawai, Y., Maeda, T., Nakamura, Y., Sakurai, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Yoshimoto, M., … Trans Tech Publications	7 Conference Proceedings Characterization of SiC Wafers by Photohlminescence Mapping Tajima, M., Higashi, E., Hayashi, T., Kinoshita, H., Shiomi, H. Trans Tech Publications
2 Conference Proceedings Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds Furusho, T., Kobayashi, R., Nishiguchi, T., Sasaki, M., Hirai, K., Hayashi, T., Kinoshita, H., Shiomi, H. Trans Tech Publications	8 Conference Proceedings 4H-SiC Trench Structure Schottky Diodes M. Aketa, Y. Yokotsuji, M. Miura, T. Nakamura Trans Tech Publications
3 Conference Proceedings Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis Furusho, T., Takagi, H., Ota, S., Shiomi, H., Nishino, S. Trans Tech Publications	9 Conference Proceedings Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy Furusho, T., Matsumoto, K., Harima, H., Nishino, S. Trans Tech Publications
4 Conference Proceedings Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8 Sasaki, M., Hirai, A., Miyanagi, T., Furusho, T., Nishiguchi, T., Shiomi, H., Nishino, S. Trans Tech Publications	10 Conference Proceedings Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers S.G. Sunkari, H. Das, C. Hoff, Y. Koshka, J.R.B. Casady Trans Tech Publications
5 Conference Proceedings Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8 Sasaki, M., Hirai, A., Miyanagi, T., Furusho, T., Nishiguchi, T., Shiomi, H., Nishino, S. Trans Tech Publications	11 Conference Proceedings 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles Saitoh, H., Kimoto, T. Trans Tech Publications
6 Conference Proceedings Growth of p-Type SiC Layer by Sublimation Epitaxy Ohta, S., Furusho, T., Takagi, H., Ohshima, S., Nisino, S. Trans Tech Publications	12 Conference Proceedings Characterization of 2 Inch SiC Wafers Made by the Sublimation Method Sasaki, M., Shiomi, H., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12