Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 2
- Page(from):
- 659
- Page(to):
- 662
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC
Trans Tech Publications |
2
Conference Proceedings
Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching
Trans Tech Publications |
8
Conference Proceedings
High Purity SiC EpitaxiaI Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
Trans Tech Publications |
Trans Tech Publications |