Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

603

Page(to):

606

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy F. Giannazzo, M. Rambach, D. Salinas, F. Roccaforte, V. Raineri Trans Tech Publications	7 Conference Proceedings Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process M. Canino, F. Giannazzo, F. Roccaforte, A. Poggi, S. Solmi, V. Raineri, R. Nipoti Trans Tech Publications
2 Conference Proceedings Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco, C. Bongiorno Trans Tech Publications	8 Conference Proceedings Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy Raineri, V., Calcagno, L., Giannazzo, F., Goghero, D., Musumeci, F., Roccaforte, F., La Via, F. Trans Tech Publications
3 Conference Proceedings Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping V. Raineri, F. Giannazzo, F. Roccaforte Trans Tech Publications	9 Conference Proceedings Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy F. Giannazzo, F. Roccaforte, S.F. Liotta, V. Raineri Trans Tech Publications
4 Conference Proceedings Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC A. Frazzetto, F. Roccaforte, F. Giannazzo, R. Lo Nigro, M. Saggio Trans Tech Publications	10 Conference Proceedings Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces F. Iucolano, F. Roccaforte, F. Giannazzo, S. Di Franco, G. Moschetti Trans Tech Publications
5 Conference Proceedings Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers F. Roccaforte, G. Greco, M.H. Weng, F. Giannazzo, V. Raineri Trans Tech Publications	11 Conference Proceedings Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces L.K. Swanson, P. Fiorenza, F. Giannazzo, F. Roccaforte Trans Tech Publications
6 Conference Proceedings Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC A. Frazzetto, F. Roccaforte, F. Giannazzo, R. Lo Nigro, C. Bongiorno Trans Tech Publications	12 Conference Proceedings Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC Nipoti, R., Carnera, A., Raineri, V. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12