Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 1
- Page(from):
- 489
- Page(to):
- 492
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
Trans Tech Publications |
9
Conference Proceedings
Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
Trans Tech Publications |