Blank Cover Image

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

Author(s):
Publication title:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
Title of ser.:
Materials science forum
Ser. no.:
600-603
Pub. date:
2009
Pt.:
1
Page(from):
417
Page(to):
420
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

Reshanov, S.A., Schneider, K., Helbig, R., Pensl, G., Nagasawa, H., Schoner, A.

Trans Tech Publications

S.A. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno

Trans Tech Publications

K. Danno, T. Kimoto

Trans Tech Publications

Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H.

Trans Tech Publications

Danno, K., Kimoto, T.

Trans Tech Publications

Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H.

Trans Tech Publications

Reshanov, S.A., Klettke, O., Pensl, G.

Trans Tech Publications

G. Alfieri, T. Kimoto, G. Pensl

Trans Tech Publications

Danno, K., Kimoto, T., Matsunami, H.

Trans Tech Publications

K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto

Trans Tech Publications

S. Hishiki, S.A. Reshanov, T. Ohshima, H. Itoh, G. Pensl

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12