Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

1

Page(from):

313

Page(to):

316

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi Trans Tech Publications	7 Conference Proceedings Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima, M. Sekine Trans Tech Publications
2 Conference Proceedings Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography H. Yamaguchi, H. Matsuhata Trans Tech Publications	8 Conference Proceedings Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, K. Momose, T. Sato Trans Tech Publications
3 Conference Proceedings Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC H. Matsuhata, H. Yamaguchi, I. Nagai, T. Ohno, R. Kosugi Trans Tech Publications	9 Conference Proceedings Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence … T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odawara, K. Momose Trans Tech Publications
4 Conference Proceedings Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography R. Tanuma, T. Tamori, Y. Yonezawa, H. Yamaguchi, H. Matsuhata Trans Tech Publications	10 Conference Proceedings EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes T. Ohyanagi, C. Bin, T. Sekiguchi, H. Yamaguchi, H. Matsuhata Trans Tech Publications
5 Conference Proceedings TEM Observation of SiO2/4H-SiC Hetero Interface H. Matsuhata, J. Senzaki, I. Nagai, H. Yamaguchi Trans Tech Publications	11 Conference Proceedings Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope M. Sasaki, K. Tamura, H. Yamaguchi, H. Matsuhata, K. Kojima Trans Tech Publications
6 Conference Proceedings Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography Ryoji Kosugi, Toyokazu Sakata, Yuuki Sakuma, Tsutomu Yatsuo, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Kenji … Materials Research Society	12 Conference Proceedings X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12