Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 1
- Page(from):
- 111
- Page(to):
- 114
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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