RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON
- Author(s):
- Publication title:
- Rapid thermal processing and beyond : applications in semiconductor processing : special topic volume : selected papers from RTP specialists all over the world, Dornstadt, Germany
- Title of ser.:
- Materials science forum
- Ser. no.:
- 573-574
- Pub. Year:
- 2008
- Page(from):
- 341
- Page(to):
- 354
- Pages:
- 14
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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