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RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON

Author(s):
Publication title:
Rapid thermal processing and beyond : applications in semiconductor processing : special topic volume : selected papers from RTP specialists all over the world, Dornstadt, Germany
Title of ser.:
Materials science forum
Ser. no.:
573-574
Pub. Year:
2008
Page(from):
341
Page(to):
354
Pages:
14
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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