Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation

Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation

Author(s):

Publication title:

Compound semiconductor materials and devices : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1635

Pub. Year:

2014

Page(from):

3

Page(to):

8

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605116129 [1605116122]

Language:

English

Call no.:

M23500/1635

Type:

Conference Proceedings

Details

TDL ID:	ZA00053482
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2013
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2013.12.01-2013.12.06
Note for article:	2013 MRS Fall Meeting, Symposium T - Compound Semiconductor Materials and Devices, December 1-6, 2013, Boston, Massachusetts, U.S.A.

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