Blank Cover Image

Multiple Nanowire Channel Poly-Si TFTs with Defect Passivation

Author(s):
Publication title:
Student Posters (General) - 213th ECS Meeting
Title of ser.:
ECS transactions
Ser. no.:
13(5)
Pub. Year:
2008
Page(from):
1
Page(to):
8
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781605606446 [1605606448]
Language:
English
Call no.:
E23400/13-4 [5]
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions

Cheng,L.-J., Lu,Y.-L., Lin,C.-W., Chang,T.-K., Cheng,H.-C.

SPIE - The International Society for Optical Engineering
7 Conference Proceedings Study on micro-bubble defect induced by RRC coating

Y. Liu, W. Liao, H. Lin, C. Chen, C. C. Huang

SPIE - The International Society of Optical Engineering
2 Conference Proceedings A Novel Multichannel Poly-Si TFT Improving Hydrogen Passivation

Park, C-M., Jeon, J-H., Yoo, J-S., Han, M-K.

MRS - Materials Research Society
8 Conference Proceedings The Dependence of Poly-Si TFT Characteristics on the Relative Misorientation Between Grain Boundaries and the Active Channel

Jung, Y.H., Yoon, J.M., Yang, M.S., Park, W.K., Soh, H.S., Cho, H.S., Limanov, A.B., Im, J.S.

Materials Research Society
3 Conference Proceedings New Poly-Si TFTs With Selectively Doped Region in the Channel

Han, M-K., Jeon, J-H., Lee, M-C., Park, K-C., Yoo, J-S., Yoon, C-E.

Materials Research Society
9 Conference Proceedings A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT

Xiong, Z., Liu, H., Zhu, C., Sin, J.K.O.

Electrochemical Society
4 Conference Proceedings In-Situ O-Plasma Passivation Effect on Poly-Si TFTs During Ion Plating Capping Oxide

Yeh, C.F., Chen, T.J., Lin, M.T., Kao, J.S.

Electrochemical Society
10 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings 41 Interstitial Oxygen Defect at Si Surface on Electrical Characteristics of High-K Gated MOS Devices

Chang-Liao, K. S., Cheng, C. L., Wang, T. K.

Electrochemical Society
11 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Low Temperature Poly-Si TFT Technology

Noguchi, T., Kim, D.Y., Kwon, J.Y., Park, K.B., Jung, J.S., Xianyu, W.X., Yin, H.X., Cho, H.S.

Materials Research Society
12 Conference Proceedings Pecision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-Цm CMOS technology

Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12