Improved InGaN LED Efficiency using Photonic Crystal Patterning and Surface Plasmon Enhanced Emission

Improved InGaN LED Efficiency using Photonic Crystal Patterning and Surface Plasmon Enhanced Emission

Author(s):

Publication title:

State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications

Title of ser.:

ECS transactions

Ser. no.:

13(3)

Pub. Year:

2008

Page(from):

5

Page(to):

11

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776288 [1566776287]

Language:

English

Call no.:

E23400/13-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00001468
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	213th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2008.05.18-2008.05.23
Note for article:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ : State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48)

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