Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO₂ for the Advanced Gate Stack

Author(s):

Publication title:

Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing

Title of ser.:

ECS transactions

Ser. no.:

13(2)

Pub. Year:

2008

Page(from):

151

Page(to):

159

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776271 [1566776279]

Language:

English

Call no.:

E23400/13-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00001467
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	213th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2008.05.18-2008.05.23
Note for article:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

Similar Items:

1 Conference Proceedings A Combinatorial Study of Metal Gate/HfO₂ MOSCAPS M. L. Green, K. Chang, I. Takeuchi, T. Chikyow Electrochemical Society	7 Conference Proceedings Evaluation Of Candidate Metals For Dual-Metal Gate Cmos With Hfo_2 Gate Dielectric Samavedam, S.B., Schaeffer, J.K., Gilmer, D.C., Dhandapani, V., Tobin, P.J., Mogab, J., Nguyen, B-Y., Dakshina-Murthy, … Materials Research Society
2 Conference Proceedings Band Alignment Issues in Metal/Dielectric Stacks: A Combined Photoemission and Inverse Photoemission Study of the HfO2/Pt and HfO2/Hf Systems Sayan, S., Bartynski, R.A., Robertson, J., Suehle, J.S., Vogel, E., Nguyen, N.V., Ehrstein, J., Kopanski, J.J., Suzer, … Electrochemical Society	8 Conference Proceedings Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂ K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. … Electrochemical Society
3 Conference Proceedings Towards 0.5 nm EOT Scaling of HfO2/Metal Electrode Gate Stacks Peterson, J. J., Brown, G. A., Matthews, K., Gutt, J., Gopalan, S., Li, H. -J., Kirsch, P., Barnett, J., Moumen, N., … Electrochemical Society	9 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society
4 Conference Proceedings A New Methodology for Characterizing the Progressive BD of HfO₂/SiO₂ Metal Gate Stacks R. Pagano, S. Lombardo, F.R. Palumbo, S. Carloni, P. Kirsch Electrochemical Society	10 Conference Proceedings Synthesis and Characterization of Combinatorial Libraries of Semiconductor Gas Sensors Aronova, M.A., Chang, K.S., Takeuchi, I., Jabs, H., Westerheim, D., Gonzalez-Martin, A., Kim, J., Lewis, B. Materials Research Society
5 Conference Proceedings Fabrication and Characterization of In Situ Grown Epitaxial Ba1-xSrxTiO3 Composition Spreads Chang, K.S., Aronova, M., Famodu, O., Hattrick-Simpers, J., Lofland, S.E., Takeuchi, I., Lu, C.J., Bendersky, L.A., … Materials Research Society	11 Conference Proceedings Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle Trans Tech Publications
6 Conference Proceedings 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics Lander, R., Schram, T., Lulan, G.S., hooker, J., Vertommen, J., Lee, S., de Weerd, W., Boullart, W., van Elshocht, S, … Electrochemical Society	12 Conference Proceedings Control of Material Interactions in Advanced High-k Metal Gate Stacks C. Wajda, G. Leusink, K. Akiyama, S. Ashigaki, S. Aoyama, K. Shimomura, M. Aruga, T. Takahashi, K. Yamazaki, H. Yamasaki Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12