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Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
13(1)
Pub. Year:
2008
Page(from):
123
Page(to):
130
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776264 [1566776260]
Language:
English
Call no.:
E23400/13-1
Type:
Conference Proceedings

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