Blank Cover Image

Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
13(1)
Pub. Year:
2008
Page(from):
101
Page(to):
109
Pages:
9
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776264 [1566776260]
Language:
English
Call no.:
E23400/13-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Ultra-Low Energy Ion Implantation of Si into HfO₂ and HfSiO-Based Structures for Non Volatile Memory Applications

F. Gloux, P.E. Coulon, J. Groenen, S. Schamm-Chardon, G. Ben Assayag, B. Pecassou, A. Slaoui, B. Sahu, M. Carrada, S. …

Materials Research Society
7 Conference Proceedings Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO2 Thin Films

Bun, D., Rochat, N., Rolland, G., Holliger, P., Martin, F., Damlencourt, J.-F., Lardin, T., Besson, P., Haukka, S., …

Electrochemical Society
2 Conference Proceedings Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition [5946-14]

Niilisk, A., Aarik, J., Uustare, T., Mamdar, H, Tkachev, S., Manghnani, M.

SPIE - The International Society of Optical Engineering
8 Conference Proceedings Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget

E. Martinez, C. Leroux, N. Benedetto, C. Gaumer, M. Charbonnier

Electrochemical Society
3 Conference Proceedings Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Respaud, M., Ben-Assayag, G., Dimitrakis, P., Normand, P., Tence, …

Materials Research Society
9 Conference Proceedings Characteristics of the HfO₂ Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

H. Kong. S. Kim, J. Kim, J. Choi, H. Jeon, C. Bae

Electrochemical Society
4 Conference Proceedings Ultra-Low energy Ion Implantation of Si into HfO₂-based layers for Non Volatile Memory Applications

Pierre-Eugène Coulon, Kristel Chan Shin Yu, Gerard BenAssayag, Sylvie Schamm, Béatrice Pécassou, Abdelilah Slaoui, …

Materials Research Society
10 Conference Proceedings Manipulation of 2D Arrays of Si Nanocrystals by Ultra Low Energy Ion Beam Synthesis for non volatile memories applications

Bonafos, C., Cherkashin, N., Carrada, M., Coffin, H., Assayag, G. Ben, Schamm, S., Dimitrakis, P., Normand, P., Perego, …

Materials Research Society
5 Conference Proceedings * Ultra Thin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3

Gusev, E.P., Canter, E., Copel, M., Gribelyuk, M., Buchanan, D.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., …

Electrochemical Society
11 Conference Proceedings Y-Doped HfO₂ Thin Films Grown by Injection MOCVD

K. Rasewel Buzin, F. Ducraquet, M. Rossell, J. Verbeeck, G. Van Tendeloo, B. Holloender, S. Rushworth, C. Dubourdieu

Electrochemical Society
6 Conference Proceedings Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO2 Thin Films

Blin, D., Rochat, N., Rolland, G., Holliger, P., Martin, F., Damlencourt, J.-F., Lardin, T., Besson, P., Haukka, S., …

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Atomic Vapor Deposition (AVDTM) process for High Performance HfO2 Dielectric Layers

Cosnier, V., Dabertrand, K., Blonkowski, S., Lhostis, S., Zoll, S., Morand, Y., Descombes, S., Guillaumot, B., Hobbs, …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12