Low Temperature Processes of Organic Thin Film Transistor with Gate Dielectric of Silicon Dioxide Deposited by Scanning Atmospheric-Pressure Technology

Low Temperature Processes of Organic Thin Film Transistor with Gate Dielectric of Silicon Dioxide Deposited by Scanning Atmospheric-Pressure Technology

Author(s):

Publication title:

Organic Semiconductor Materials and Devices

Title of ser.:

ECS transactions

Ser. no.:

11(25)

Pub. Year:

2008

Page(from):

59

Page(to):

65

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781605601977 [1605601977]

Language:

English

Call no.:

E23400/11-21 [25]

Type:

Conference Proceedings

Details

TDL ID:	ZA00013265
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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