Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing

Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing

Author(s):

Publication title:

ULSI process integration 5

Title of ser.:

ECS transactions

Ser. no.:

11(6)

Pub. Year:

2007

Page(from):

379

Page(to):

394

Pages:

16

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775724 [1566775728]

Language:

English

Call no.:

E23400/11-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00013283
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

Similar Items:

1 Conference Proceedings Enhanced Boron Activation in Strained-Si/Si_1-xGe_x Substrate Using Laser Annealing K. Pey, K. Ong, P. Lee, A. Wee, X. Wang Electrochemical Society	7 Conference Proceedings SILICIDED SHALLOW JUNCTION FORMATION USING ION IMPLANTATION AND THERMAL ANNEALING Rubin, Leonard M., Herbots, N., Hoffman, D., Ma, D. Materials Research Society
2 Conference Proceedings Fundamental Issues in Rapid Thermal Annealing (RTA), Spike RTA and Excimer Laser Annealing (ELA) for the Formation of Shallow p+/n Junctions Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Tung, C.H., Lu, Y.F. Electrochemical Society	8 Conference Proceedings Shallow contact formation of gadolinium silicide Cheng, I. C., Lau, S. S., Thompson, R. D., Tu, K. N. North-Holland
3 Conference Proceedings Thickness Effect On Nickel Silicide Formation And Thermal Stability For Ultra Shallow Junction CMOS Zhao, F.F., Shen, Z.X., Zheng, J.Z., Gao, W.Z., Osipowicz, T., Pang, C.H., Lee, P.S., See, A.K. Materials Research Society	9 Conference Proceedings Formation of NiSi-Silicided p+n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing Wang, Chao-Chun, Lin, Chiao-Ju, Chen, Mao-Chieh Materials Research Society
4 Conference Proceedings Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society	10 Conference Proceedings Laser thermal processing for shallow junction and silicide formation (Invited Paper) [3506-06] Talwar,S., Verma,G., Weiner,K.H., Gelatos,C. SPIE-The International Society for Optical Engineering
5 Conference Proceedings A NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI Kwong, D.L., Ku, Y.H., Lee, S.K., Alvi, N.S., Chu, P., Zhou, Y., White, J.M. Materials Research Society	11 Conference Proceedings Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition Li,M., Chen,X., Wang,J., Yang,J., Wu,G., Zhao,L. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Formation and Characterization of NiSi-Silicided n+-p Shallow Junctions Using Implantation Through Sulcide and Low Temperature Furnace Annealing Wang, C.-C., Chen, M.-C. Electrochemical Society	12 Conference Proceedings SILICON CONSUMPTION DURING SELF-ALIGNED TITANIUM SILICIDE FORMATION ON SHALLOW JUNCTIONS Smith, P.L., Osburn, C.M., Wen, D.S., McGuire, G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12