Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

Author(s):

Publication title:

ULSI process integration 5

Title of ser.:

ECS transactions

Ser. no.:

11(6)

Pub. Year:

2007

Page(from):

349

Page(to):

355

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775724 [1566775728]

Language:

English

Call no.:

E23400/11-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00013283
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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