Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

Author(s):

Publication title:

State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8

Title of ser.:

ECS transactions

Ser. no.:

11(5)

Pub. Year:

2007

Page(from):

239

Page(to):

245

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775717 [156677571X]

Language:

English

Call no.:

E23400/11-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00013284
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting : Wide-Bandgap Semiconductor Materials and Devices 8, October 7 - October 12, 2007, Washington, DC

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