Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

Author(s):

Publication title:

Analytical and diagnostic techniques for semiconductor materials, devices and processes 7

Title of ser.:

ECS transactions

Ser. no.:

11(3)

Pub. Year:

2007

Page(from):

71

Page(to):

84

Pages:

14

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775694 [1566775698]

Language:

English

Call no.:

E23400/11-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00013285
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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