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Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

Author(s):
Publication title:
Analytical and diagnostic techniques for semiconductor materials, devices and processes 7
Title of ser.:
ECS transactions
Ser. no.:
11(3)
Pub. date:
2007
Page(from):
71
Page(to):
84
Pages:
14
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775694 [1566775698]
Language:
English
Call no.:
E23400/11-3
Type:
Conference Proceedings

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