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Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

Author(s):
Publication title:
Cleaning and surface conditioning technology in semiconductor device manufacturing 10
Title of ser.:
ECS transactions
Ser. no.:
11(2)
Pub. date:
2007
Page(from):
63
Page(to):
70
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775687 [156677568X]
Language:
English
Call no.:
E23400/11-2
Type:
Conference Proceedings

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