Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

Author(s):

Publication title:

Cleaning and surface conditioning technology in semiconductor device manufacturing 10

Title of ser.:

ECS transactions

Ser. no.:

11(2)

Pub. Year:

2007

Page(from):

63

Page(to):

70

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775687 [156677568X]

Language:

English

Call no.:

E23400/11-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013286
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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